The photochemical conversion of the zinc oximato complex of di-aqua-bis[2-(methoxyimino)propanoato]zinc 1 into zinc oxide thin films is introduced as an alternative route compared with the traditional thermal process. Irradiation of 1 by UV light produces smoother films with random orientation of crystalline grains, compared with the thermal route, which results in films with a high degree of (002) orientation (texture) toward the substrate. By addition of Ga(NO(3))(3), gallium-doped zinc oxide (GZO) thin films can be obtained after further sintering, e.g., in air. The GZO films exhibit a low surface roughness and a high optical transparency. Electrical resistivities as low as 7.4 x 10-2 center dot cm were observed, making it a candidate for application in the field of transparent conduction oxides.