Journal of the American Ceramic Society, Vol.94, No.9, 2746-2748, 2011
Low Temperature Pressureless Sintering of SiC Using an Aluminum Borocarbide Additive
The densification of an Al(3)BC(3)-SiC system during pressureless sintering was investigated. Densification of SiC could be achieved after sintering at 1850 degrees C for 2 h by adding 10 wt% Al(3)BC(3). The formation of partly crystallized grain boundaries and a core-rim structure within SiC grains indicated that liquid phase sintering was the major densification mechanism. The initial shrinkage at 1430 degrees C was caused by the formation of a liquid silicate phase. Sintering shrinkage accelerated above 1580 degrees C due to the rearrangement of SiC particles. The dissolution-reprecipitation of SiC and the final removal of pores occurred above 1780 degrees C. In contrast to Al(2)O(3) additive which has low efficiency, Al(3)BC(3) strongly promoted the pressureless sintering of SiC.