In this work, (Pb0.97La0.02)(Zr0.85Sn0.12Ti0.03)O-3 (PLZST 2/85/12/3) antiferroelectric (AFE) thin films with a thickness of similar to 700 nm were successfully fabricated on (100)-oriented Nb-SrTiO3 single crystal via a sol-gel technique. X-ray diffraction and scanning electron microscopy results showed that the obtained AFE films had a highly (100)-preferred orientation and displayed a uniform surface microstructure. Electrical measurements, such as P-E loops, the electric-field, and temperature-dependent dielectric properties, demonstrated a mixture of AFE and FE phases in PLZST 2/85/12/3 films deposited on Nb-SrTiO3 substrates.