A new low-loss, low-temperature sinterable microwave dielectric material ZnTiNbTaO8 was investigated for the first time. Single phase ZnTiNbTaO8 was obtained by the conventional solid-state route and sintered at 1120 degrees C-1200 degrees C for 6 h. Theoretical density, packing fraction, bond valence, and oxygen octahedron distortion were calculated. The excellent microwave dielectric properties of epsilon = 36.3, Qf = 67 000 GHz, tau(f) = -57.66 x 10(-6)/degrees C were obtained from the new ZnTiNbTaO8 materials sintered at 1140 degrees C for 6 h.