The xBiZn(1/2)Ti(1/2)O(3)-(1 - x)PbTiO3 (BZT-PT, x = 0.1-0.3) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates via an aqueous sol-gel method. Highly (100) oriented BZT-PT films with thickness of 600 nm were obtained by introducing PbO seeding layers. Dense uniform microstructures with average grain size of about 50 nm were observed for these films. The dielectric, ferroelectric, and piezoelectric properties of the BZT-PT thin films were investigated. The curie temperature of the BZT-PT films was about 535 degrees C for x = 0.2, and higher than 600 degrees C for x = 0.3. The local effective piezoelectric coefficient d(33)* of the (100) oriented BZT-PT films was approximately 40 pm/V for x = 0.3.