Free-standing nanostructured Aluminum nitride (AlN) film with high transparence in visible light has been prepared by direct reaction of AlCl3 and NH3 through a thermal chemical vapor deposition method. The structural and morphological examinations reveal that the film is composed of a large number of well aligned wurtzite-structured AlN nanorods with growth direction along the c-axis. Raman scattering spectrum indicates the high alignment of the AlN nanorods, too. At room temperature, the nanostructured AlN film exhibits a sharp ultraviolet emission at 358 nm and a broad blue emission peak centered at 471 nm, which suggests its potentials in short-wavelength optoelectronic applications.