A novel microwave dielectric ceramics of Zn3B2O6 for substrate application with low sintering temperature was synthesized by the solid-state reaction method. The sintering temperature ranges from 875 degrees C to 950 degrees C. The best microwave dielectric properties were obtained in the ceramic sintered at 925 degrees C for 4 h with a permittivity 6.7, a Q X f value about 58, 500 GHz and a temperature coefficient value of -58 ppm/degrees C. From the X-ray diffraction, backscattered electron imaging results of the co-fired sample with 20 wt% silver additive, the Zn3B2O6 ceramic was found not to react with Ag at 950 degrees C. The microwave dielectric properties and low sintering temperature of Zn3B2O6 ceramic make it a promising candidate for Low temperature co-fired ceramic applications as substrate.