A solution, with various deposition parameters optimized to deposit electroless Ni-B films on p-silicon, has been developed, using sodium borohydride as the reducing agent. This has been done with a view to replace the existing silver-aluminum back contact for crystalline silicon solar cells with Ni-B films. The deposition has been studied by varying the temperature, time of deposition and the concentration of the reducing agent used, keeping the pH of the solution unchanged. Sheet resistance of the deposited films were measured to confirm the growth. Preliminary studies on contact resistance between Ni-B film and p-Si have been carried out. (C) 2004 Elsevier Ltd. All rights reserved.