(La0.05Bi0.95)(2)Ti2O7 (LBTO) thin films had been successfully prepared on P-type Si substrate by chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of (La0.05Bi0.95)(2)Ti2O7 is more stable than the phase of Bi2Ti2O7 without La substitution. The films exhibited good insulating properties with room temperature resistivities in the range of 10(12)-10(13) Omega cm. The dielectric constant of the film annealed at 550 degrees C at 100 kHz was 157 and the dissipation factor was 0.076. The LBTO thin films can be used as storage capacitors in DRAM. (c) 2005 Elsevier Ltd. All rights reserved.