Pb0.97La0.02(Zr0.95Ti0.05)O-3 antiferroclectric thin films with thickness of nm were successfully deposited on TiO2 buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates via sol-gel process. Microstructure of Pb0.97La0.02(Zr0.95Ti0.05)O-3 thin films was studied by X-ray diffraction analyses. The anti ferroelectric nature of the Pb0.97La0.02(Zr0.95Ti0.05)O-3 thin films was confirmed by the double hysteresis behaviors of polarization and double buffer fly response of dielectric constant versus applied voltage at room temperature. The capacitance-voltage behaviors of the Pb0.97La0.02(Zr0.95Ti0.05)O-3 films with and without TiO2 buffer layer were studied, as a function of temperature. The temperature dependence of dielectric constant displayed a similar behavior and the Curie temperature (T-c) was 193 degrees C for films on both substrates. The current caused by the polarization and depolarization of polar in the Pb0.97La0.02(Zr0.95Ti0.05)O-3 films was detected by current density-electric field measurement. (C) 2007 Elsevier Ltd. All rights reserved.