Tungsten substituted samples of compositions SrBi2(WxTa1-x)(2)O-9 (x = 0.0, 0.025, 0.050, 0.075, 0.10 and 0.20) were synthesized by solid-state reaction method and studied for their microstructural. electrical conductivity, ferroelectric and piezoelectric properties. The X-ray diffractograms confirm the formation of single phase layered perovskite structure in the samples with x up to 0.05. The temperature dependence of dc conductivity vis-A-vis tungsten content shows a decrease in conductivity, which is attributed to the suppression of oxygen vacancies. The ferroelectric and piezoelectric studies of the W-substituted SBT ceramics show that the remanent polarization and d(33) values increases with increasing concentration of tungsten Lip to x <= 0.05. Such compositions with low conductivity and high P-r Values should be excellent materials for highly stable ferroelectric memory devices. (C) 2009 Elsevier Ltd. All rights reserved.