The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO(2)/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V(1.85)W(0.15)O(5) thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V(1.85)W(0.15)O(5) thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V(1.85)W(0.15)O(5) thin films annealed at 400 degrees C were 44, with a dielectric loss of 0.83%. The TCR values of the V(1.85)W(0.15)O(5) thin films annealed at 400 degrees C were about -3.45%/K. (C) 2009 Elsevier Ltd. All rights reserved.