Strong 1.53 mu m light emission has been achieved in Si/Er-Si-O multilayer structure grown by sputtering method and annealing process. The luminescence intensity at 1.53 mu m increases with annealing temperature, reaching maximum at about 800 degrees C, and decreases at higher temperatures. It is found that the amorphous Si well layer can sensitize and enhance Er(3+) luminescence in Er-Si-O sublayer through carrier-mediated processes. Moreover, the Si/Er-Si-O multilayer exhibits much low temperature- and carrier-induced quenching of Er(3+) luminescence, with the photoluminescence intensity at 1.53 mu m decreased about a factor of only 1.4 from 80K to 300 K. The new Si nanostructure material reported here may open the route towards the realization of electrically pumped Si-based light source. (C) 2010 Elsevier Ltd. All rights reserved.