Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

Keshavarzi R; Mirkhani V; Moghadam M; Tangestaninejad S; Mohammadpoor-Baltork I; Fallah HR; Dastjerdi MJV; Modayemzadeh HR

Materials Research Bulletin, Vol.46, No.4, 615-620, 2011

DOI10.1016/j.materresbull.2010.09.019 Export Citation

Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

Keshavarzi R, Mirkhani V, Moghadam M, Tangestaninejad S, Mohammadpoor-Baltork I, Fallah HR, Dastjerdi MJV, Modayemzadeh HR

In this work, the preparation of In(2)O(3)-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In(2)O(3)-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 degrees C. (C) 2010 Elsevier Ltd. All rights reserved.

Keywords:Thin films;Nanostructure;Vapor deposition;X-ray diffraction;Optical properties