We have grown ferroelectric Pb(0.92)La(0.08)Zr(0.52)Ti(0.48)O(3) (PIZT) films on platinized silicon and LaNiO(3)-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of approximate to 960 and dielectric loss of approximate to 0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of and dielectric loss of approximate to 0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10(6) V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of approximate to 8.1 x 10(-9) A/cm(2) and mean breakdown field strength of 1.7 x 10(6) V/cm were measured at room temperature. Finally, remanent polarization (P(r)) of approximate to 2.0 x 10(-5) C/cm(2), coercive electric field (E(c)) of approximate to 3.4 x 10(4) V/cm, and energy density of approximate to 45 J/cm(3) were determined from room-temperature hysteresis loop measurements on PLZT/LNO/Ni film-on-foil capacitors with 250-mu m-diameter platinum top electrodes. (C) 2011 Elsevier Ltd. All rights reserved.