The diffusion of K and I atoms from 5 M water solution of KI into polypropylene implanted with 150 keV F+ and I+ was studied at boiling temperature. Standard Rutherford back scattering (RSB) technique was used for the determination of concentration depth profiles of diffused atoms. It was found that the I and K atoms penetrate the polymer surface layer affected by ion implantation and they are captured by trapping centers produced by electronic energy losses of implanted ions. The uptake of K atoms is several times higher than that of I atoms, and the relative K concentration exceeds the KI stoichiometric value.