A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICL/Ar and IBr/Ar chemistries. Etch rater in excess of 3.1 for InP, 3.6 for InSb, 2.3 for InGaP, and 2.2 mu m/min for InGaAs were obtained in Ibr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: The etch rates increased substantially with increasing ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than Icl/Ar, but the etched surface morphologies were fairly poor for both chemistries.