The removal of particulate contamination is a critical issue for many manufacturing processes. It is particularly critical to the electronics industry in which small pieces of microscopic debris remaining after chemical mechanical planarization (cmp) using submicron polishing particles can cause device failure. One way to enhance particle removal following the cmp process is to utilize surfactants. Recent research has shown ways to model the effect of surfactants on enhanced particle removal. However, previous research has not demonstrated the effect of ionic strength on enhanced particle removal associated with surfactant use. Past research has also not shown the combined effects of ionic strength and surfactant concentration on enhanced particle removal using surfactants. This article summarizes the parameters affecting particle removal, and it provides data and analysis on the effect of ionic strength as well as the combined effects of ionic strength and surfactant concentration on particle removal following cmp processing.