CuGaSe2 thin films with thicknesses of about 2 mum were prepared by flash and single source evaporation onto mica and (I I 0)-oriented ZnSe substrates in the substrate temperature range 150-450 degreesC. The obtained polycrystalline CuGaSe2 films had the chalcopyrite structure with the predominant growth direction [221]. Hall effect, conductivity and luminescence measurements have been carried out on CuGaSe2 thin films and source materials: CuGaSe2 single crystals grown by Bridgman technique and by chemical vapour transport using I-2 as transport agent. All films and crystals are p-type. Two acceptor levels with ionization energies E(A1)similar to 50-56meV and E(A2)similar to 130-150meV have been identified as due to Ga vacancy and presence of Se atoms on interstitial sites respectively.