Films of polycrystalline Bi2S3 have been prepared onto bismuth and platinum substrates by electrodeposition from an aqueous sulfide bath. The films were thin, uniform and well adhered. Bi2S3 is a direct band gap semiconductor with a value of 1.28 eV optimally matched with the solar spectrum. The photoelectrochemical study was undertaken for the generation of hydrogen by using illuminated n-Bi2S3 particles; it was found that hydrogen evolution depends highly on the synthesis method of powder. Impregnation of platinum onto Bi2S3 shows a production enhancement of about 25%. The most active photocatalyst, prepared by a solvent thermal process and loaded with Pt in 0.1 M S2- alkaline electrolyte, yields 2.13 x 10(-2) ml mg(-1) of H-2 after 4 h of irradiation with the visible output of a 500 W halogen lamp. (C) 2002 Elsevier Science B.V. All rights reserved.