It is necessary to develop solar grade (SoG) silicon for the photovoltaic industry. A desirable approach is to upgrade metallurgical grade (MG) silicon. The most problematic impurities to remove from MG silicon are B and P. A simple process to remove B from MG silicon has been developed by refining MG silicon in the molten state followed by directional solidification. With this approach, B has been reduced to 0.3 ppma, P to <10 ppma and all other impurities to <0.1 ppma using commercially available, as-received MG silicon. It remains to develop a similar P reduction process so that SoG silicon production from MG silicon can be commercialized. The B-removal process was applied to B overdoped electronic grade silicon, and the resulting material was used for crystal growth. Test solar cells of 12.5-13.4% (1 cm(2)) efficiency were produced. (C) 2002 Elsevier Science B.V. All rights reserved.