Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe2 thin films have been investigated. The n-type CuInSe2 films in which the carrier concentration was about 3 x 10(16) cm(-3), were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3 x 10(16) e cm(-2). As the electron fluence exceeded 10(17) e cm(-2), both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm(-1), which is slightly lower than that of III-V compound materials. (C) 2002 Elsevier Science B.V. All rights reserved.