ZnO:B windows for 30 cm x 30 cm-sized Cu(In,Ga)Se-2 (CIGS)-based submodules are deposited by metal-organic chemical vapor deposition (MOCVD). The ZnO thin films have a high electron mobility of over 35 cm(2)/V s, and have a sheet resistance of about 10 Ohm/sq. while keeping a transmittance of near 90% for the wavelength ranging from 400 to 1300 nm. Further improvement of the MOCVD deposition by growing ZnO/ZnO:B windows is performed, and a conversion efficiency of 12.93% (V-oc/cell = 592mV, J(sc) = 33.87mA/cm(2), FF = 0.645) for a 30 cm x 30 cm-sized CIGS-based submodule with an aperture area of 864 cm(2) has been achieved. (C) 2002 Published by Elsevier Science B.V.