This note presents results on Hall effect characteristics (mobility and density of majority charge carriers) of undoped p-type and n-doped pyrite thin films. Carrier mobilities between 200 and 0.07 cm(2)/V s have been measured in undoped p-type films. Doped n-type films present values which vary from 200 to 0.1 cm(2)/V s. The corresponding carrier densities change from 2 x 10(18) to 10(22) cm(-3) in p-type films and from 6 x 10(17) to 10(21) cm(-3) in n-type films. These results reinforce the physical basis and conclusions of the modelling of pyrite solar cells accomplished by Altermatt et at. (Sol. Energy Mater. Sol. Cells 71 (2002) 181). (C) 2002 Elsevier Science B.V. All rights reserved.