Polycrystalline thin films of CuIn1-xGaxTe2 have been deposited by flash evaporation on Corning glass 7059 substrates at T-s = 200degreesC. Hall and resistivity measurements have been carried out down to 77K. These films are p-type and the variation of the resistivity may be linked to defects, disorder of the material or grain boundaries. The PL spectra of these films after annealing in argon atmosphere at T-a = 450degreesC have showed a broad band emission between 0.98 and 1,12eV in which the main peak appears at 1.05eV (at 4.2K). (C) 2002 Elsevier Science B.V. All rights reserved.