Boron-doped amorphous carbon (a-C(B)) films,here prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of aC(B)/n-Si structure yielded an open-circuit voltage (V-oe) of 0.27 V and a short-circuit current density (J(sc)) of 2.2 mA/cm(2) under illumination (AM1.5 100mW/cm(2)). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53. respectively. (C) 2002 Elsevier Science B.V. All rights reserved.