Highly conducting fluorine-doped cadmium oxide (CdO:F) thin films were deposited by sol-gel dip coating technique on glass and Si substrates. F concentration in the films was varied from 2.0% to 13.8% as determined from energy dispersive X-ray analysis. X-ray diffraction pattern showed that the films were polycrystalline in nature. The optimum F concentration for obtaining maximum conductivity was found to be similar to9.7%. The corresponding electrical conductivity was found to be similar to 1.088 X 10(4) S/cm and mobility similar to 60.41 V/cm(2). Analysis of UV-VIS-NIR spectrum of the film with F concentration similar to9.7% showed a direct band gap energy of 2.3 eV. (C) 2003 Elsevier B.V. All rights reserved.