The AC parameters of back surface field reflected (BSFR) silicon solar cell are measured at different cell temperatures (198-348 K) both in forward and reverse bias under dark condition using impedance spectroscopy technique. It is found that cell capacitance increases with temperature whereas cell resistance decreases, in forward bias voltage. Beyond maximum power point voltage, the cell inductance (0.28 muH) is measured, as the inductive reactance is comparable with cell series resistance. The measured cell parameters (cell capacitance, dynamic resistance, etc) are used to calculate the mean carrier lifetime and diode factor at different cell temperatures. (C) 2004 Elsevier B.V. All rights reserved.