This work deals with the characterization of nanocrystalline (nc) silicon films, grown using the plasma enhanced chemical vapour deposition (PECVD) process based on a low-voltage high-current arc discharge plasma named LEPECVD (low-energy PECVD). The structural, electrical and chemical properties of the LEPECVD grown films have been studied as a function of the deposition parameters (substrate temperature, growth rate, silane dilution). The results show that the films consist of elongated nanocrystals along the < 111 > direction, embedded in an amorphous matrix. The crystallite size along the < 111 > direction is in the range of 9-20 nm. The volume fraction of crystallinity (chi(c)) varies between 51% and 78%, depending on preparation conditions. Conductivity values of the order of 10(-6) Omega(-1) cm(-1) for the layers were measured, making the material suitable for the p-i-n junction application. (c) 2004 Elsevier B.V. All rights reserved.