Cd4GeSe6 crystals were grown by chemical vapour transport method. The polycrystalline material was characterised by X-ray, photoelectrochemical and photoluminescence methods. The identification of crystal parameters was refined by X-ray diffraction. Cd4GeSe6 was found to be n-type material with a 1.759 eV direct band gap. The equivalent electrical circuit of Cd4GeSe6/electrolyte junction was also determined. A possible application field of the examined material in photoelectrochemical energy conversion is suggested. (C) 2005 Elsevier B.V. All rights reserved.