The heterostructure design proposed by us for the photovoltaic (PV) solar cell is: Au-Cu/p-CdTe:Sb/n-CdO:F/glass. The CdO:F films were grown by the sol-gel method, in conditions in order to get low resistivity similar to 4.5 x 10(-4) Omega-cm and an optical transmission higher than 85%. The CdTe:Sb films were prepared by means of the RF sputtering technique, in conditions to get resistivity value around 10(6) Omega-cm, high crystalline quality and higher grain size. The Au-Cu contacts were thermally evaporated. For the study of PV-heterostructure a systematic variation of the preparation parameters were carried out. The parameters involved in the manufacture of the cell, in order to look for the highest efficiency were: (A) For the deposit of the p-CdTe:Sb films, a low argon pressure of 2.5 m Torr and high substrate temperature of 450 degrees C. The CdTe:Sb film thickness was varied in the interval 4.5-11 mu m. (B) For the activation of the heterostructure: (i) The treatment temperature in vacuum, after the CdTe is deposited, was varied in the 350-550 degrees C range and (ii) the treatment temperature in Ar atmosphere, after the heterostructure is dipped in CdCl2 solution, was studied in the 400-510 degrees C range. (C) Optimization of the Cu-Au contact with the adequate Cu-film thickness. The highest energy conversion efficiency (eta) value was 5.48%. This work reports a systematic study of the parameters involved in the solar cell manufacture, for the search of a better value of eta. (c) 2006 Elsevier B.V. All rights reserved.