Large-scale, high-efficiency thin-film silicon solar cells fabricated by short-pulsed plasma CVD method

Fujioka Y; Shimizu A; Fukuda H; Oouchida T; Tachibana S; Tanamura H; Nomoto K; Okamoto K; Abe M

Solar Energy Materials and Solar Cells, Vol.90, No.18-19, 3416-3421, 2006

DOI10.1016/j.solmat.2005.10.027 Export Citation

Large-scale, high-efficiency thin-film silicon solar cells fabricated by short-pulsed plasma CVD method

Fujioka Y, Shimizu A, Fukuda H, Oouchida T, Tachibana S, Tanamura H, Nomoto K, Okamoto K, Abe M

A novel growth technology of microcrystalline silicon (pc-Si:H) thin films has been developed using short-pulsed VHF plasma CVD method [K. Nomoto, et al., Short-pulse VHF plasma-enhanced CVD of high-deposition-rate a-Si:H films, in: Proceedings of the 14th European Photovoltaic Solar Energy Conference and Exhibition, 1997, pp. 1226-1230]. The homogeneity of crystallinity in a film over square meter was improved by using this technology. We applied this technology to intrinsic layers of pc-Si:H single solar cell, and confirmed that the homogeneity of cell's characteristics on a large-scale substrate was improved. And using this novel fabrication technology to intrinsic layers of a-Si:H/mu c-Si:H tandem thin-film Si solar cell, initial conversion efficiency of 12.1 %, corresponding to about I I % stabilized conversion efficiency was obtained with a large-scale substrate size of 925 mm x 560 mm. (c) 2006 Elsevier B.V. All rights reserved.