Main photovoltaic properties of polycrystalline silicon solar cells are often affected by dislocation effects. Dislocations degrade functional photocurrent and considerably alter relevant parameters such as short-circuit current density, dark current intensity and open-circuit voltage. In this study, we have developed an enhanced photothermal technical protocol for diagnosing dislocation spatial distribution inside photovoltaic polycrystalline silicon solar cells. We tried to establish a qualitative and quantitative correlation between the local thermal properties alteration and dislocation spatial range. Experimental imaging profiles, yielded by this technique are compared to other diagnostic techniques results. (c) 2007 Elsevier B.V. All rights reserved.