Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (100) InP substrates

Dashiell MW; Ehsani H; Sander PC; Newman FD; Wang CA; Shellenbarger ZA; Donetski D; Gu N; Anikeev S

Solar Energy Materials and Solar Cells, Vol.92, No.9, 1003-1010, 2008

DOI10.1016/j.solmat.2008.02.042 Export Citation

Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (100) InP substrates

Dashiell MW, Ehsani H, Sander PC, Newman FD, Wang CA, Shellenbarger ZA, Donetski D, Gu N, Anikeev S

Analysis of the composition, strain-relaxation, layer-tilt, and the crystalline quality of InyGa1-yAs/ InP1-xAsx thermophotovoltaic (TPV) diodes grown by metal-organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis X-ray reciprocal space mapping techniques. [n(0.53)Ga(0.47)s (E-gap = 0.74 eV) n/p junction diodes are grown lattice matched (LM) to InP substrates and lattice-mismatched (LMM) In0.67Ga0.33As (E-gap = 0.6 eV) TP%/ diodes are grown on three-step InP1-xAsx (0

Keywords:InGaAs;thermophotovoltaic;X-ray diffraction;reciprocal space mapping