An aqueous method for the deposition of silver-indium-sulfide ternary semiconductor film electrodes is presented. Various deposition parameters, such as reaction temperature and molar ratios of different chelating agents, were changed in order to grow uniform and adherent films on indium-tin-oxide glass substrates. With a reaction temperature higher than 65 C, a film composed of AgIn5S8 was grown on the substrates in our experimental conditions. The direct and indirect energy band gaps of samples prepared in this study varied from 1.70 to 1.97 eV and 1.61 to 1.72 eV, respectively. The maximum photocurrent density of samples in this study reached 3.0 mA/cm(2) at an external potential of +1.0V vs. a Pt electrode under illumination using a 300W Xe lamp system with the light intensity set at 100 mW/cm(2). Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.