We have investigated on the production of microcrystalline-silicon (mu c-Si) films from solid Si sources by the chemical transport deposition, and could obtain photo-sensitive mu c-Si films. The crystallinity and photo-sensitivity of mu c-Si films are improved by increasing hydrogen pressure and the highest photosensitivity of 50 times is obtained at 200 Pa. The high density of atomic hydrogen probably causes the defect passivation in the high-pressure conditions. The distance between the Si target and the substrate is also important to improve the film properties, and a shorter distance is effective for higher deposition rate, crystallinity and photo-sensitivity. (C) 2008 Elsevier B.V. All rights reserved.