A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour-liquid-solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embedding the nanowires in a spin-on glass matrix and subsequent chemical-mechanical polishing of the front surface. This planarization step allows to deposit a continuous and uniform conductive film on top of the nanowire array, and thus to form a high-quality front electrical contact. For an illumination intensity of 100 mW/cm(2), our devices exhibit an energy conversion efficiency of 1.9%. The main performance limiting factor is a high pn junction reverse current, due to contamination by the growth catalyst or to a lack of passivation of surface electronic defects. (C) 2009 Elsevier B.V. All rights reserved.