Active layers of i-In0.13Ga0.87N p-i-n photovoltaics (PVs) with a single antireflection layer (SARL) and a multi-antireflection layer (MARL), respectively, were fabricated. Reflectance simulation results show that the PVs with a SARL or a MARL have performance superior to those without an antireflection layer (ARL). In particular, the surface reflectance of PVs with a MARL was reduced to 6% at wavelengths between 330 and 500 nm. The ARL reduced the reflectance and recombination current, as well as boosting shunt resistance without increasing series resistance. Compared with PVs without an ARL, the open-circuit voltage and fill factor of PVs with a MARL increased by 100% and 54.5%, respectively. The ideal factor was improved by 19.4% and 31.9% in devices with a SARL (SiO2) and a MARL (Ta2O5/SiO2), respectively. (C) 2010 Elsevier B.V. All rights reserved.