Experimental evidence shows that non-shallow acceptor states defect complex V(cd)-Cl(Te)vertical bar(0/-) and Cu substitution of Cd Cu(cd)vertical bar(0/-) play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells. In this work, two equations are presented by using graphic method, one to determine the limit of p-doping or hole density for such non-shallow acceptor levels, and another to show the quantitative relationship of n-type donor compensation of p-type acceptors in such a material. (C) 2010 Elsevier B.V. All rights reserved.