Stacked thin films composed of In-2(Se,S)(3) and CuIn(Se,S)(2) layers were grown on a fluorine-doped tin oxide (FTO)-coated glass substrate using electrodeposition of the corresponding selenide (In2Se3 and CuInSe2) precursors followed by annealing in H2S flow (5% in Ar). Structural characterizations of both layers revealed that the resulting film quality strongly depended on annealing conditions of both CuIn(Se,S)(2) and In-2(Se,S)(3) layers: a compact and uniform film was obtained by annealing both layers at 400 degrees C. Performance of Au/CuIn(Se,S)(2)/In-2(Se,S)(3)/FTO superstrate-type solar cells also followed these structural characteristics, i.e., a preliminary conversion efficiency of 2.9% was obtained on the device based on 400 degrees C-annealed In-2(Se,S)(3) and CuIn(Se,S)(2) layers. (C) 2010 Elsevier B.V. All rights reserved.