Solar Energy Materials and Solar Cells, Vol.95, No.9, 2655-2658, 2011
Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight
A gallium phosphide (GaP) photovoltaic junction is grown by molecular beam epitaxy (MBE) on a GaP substrate. An anti-reflection coating of polymethyl methacrylate (PMMA) is applied and the cell is measured under concentrations of 1 x and 10.7 x in an outdoor setting. Efficiencies up to 2.6% and open circuit voltages up to 1.57 V are reported. (C) 2011 Elsevier B.V. All rights reserved.