In order to fabricate low cost and printable CuIn(x)Ga(1-x)Se(y)S(2-y) (CIGS) thin film solar cells, a precursor solution based method was developed. Particularly, in this method, nearly carbon-free CIGS film was obtained by applying a three-step heat treatment process: the first for the elimination of carbon residue by air annealing, the second for the formation of CIGS alloy by sulfurization, and the third for grain growth and densification in the CIGS film by selenization. The film also revealed very large grains with a low degree of porosity, similar to those produced by the vacuum based method. A solar cell device with this film showed current-voltage characteristics of J(SC)=21.02 mA/cm(2), V(OC)=451 mV, FF=47.3%, and n=4.48% at standard conditions. (C) 2011 Elsevier B.V. All rights reserved.