CuInS2 thin films were prepared using a sol-gel spin-coating method. Copper acetate monohydrate (Cu(CH3COO)(2).H2O) and indium acetate (In(CH3COO)(3)) were dissolved into 2-propanol and 1-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 1500 rpm, and dried at 300 degrees C for Cu-In as-grown films. The as-grown films were sulfurized inside a graphite container box. A clear chalcopyrite phase was observed without a secondary phase. Surface roughness of the films sulfurized at 500 degrees C was 19.1 nm. A Raman spectra measurement confirmed that no Cu-S or In-S compounds were created in the thin films. (c) 2007 Elsevier B.V. All rights reserved.