Thin Solid Films, Vol.516, No.15, 4953-4957, 2008
Ammonia-free chemical bath deposition of nanocrystalline ZnS thin film buffer layer for solar cells
In this work, we prepared zinc sulfide thin films on glass substrates by ammonia-free chemical bath deposition method using thioacetamide as the sulfide source and Ethylene Diamine Tetra Acetic Acid disodium salt as the complexing agent in a solution of pH=6.0. Thin films of ZnS with different thicknesses of 18-450 nm were prepared. The effect of film thickness and annealing temperature in atmospheric air, on optical properties, band gap energy and grain size of nanocrystals were studied. The X-ray diffraction analysis showed a cubic zinc blend structure and a diameter of about 2-5 nm for ZnS nanocrystals. The Fourier Transform Infrared spectrum of films revealed no peaks due to impurities. The as-deposited ZnS films had more than 70% transmittance in the visible region. The direct band gap of as-deposited films ranged from 3.68 to 3.78 eV and those of annealed films varied from 3.60 to 3.70 eV (C) 2007 Elsevier B.V. All rights reserved.
Keywords:ZnS;thin films;chemical bath deposition;ammonia-free CBD;buffer layer;solar cells;semiconductor