We have investigated the electrical and optical properties of Ba(Hf(x)Ti(1-x))O(3) (x = 0, 0.1, 0.2, 0.3, 0.4) (BHT) thin films deposited on platinized silicon and fused quartz substrates. Analyses of the X-ray diffraction patterns reveal that with the increase in Hf contents there is a systematic increase of the lattice constants of BHT films. Irrespective of the measurement frequencies the dielectric constants was found to be systematically decreased, whereas their frequency dispersion was found to be reduced with increasing Hf contents. The leakage current data measured using a metal-insulator-metal configuration reveal that the Schottky emission is the dominant leakage current mechanism in these films. BHT films, deposited on transparent fused quartz substrates, were also characterized in terms of their optical properties. For this purpose the transmittance of the undoped as well as Hf doped barium titanate thin films was measured as a function of wavelength in the range of 290 nm to 800 nm. The transmission spectra were analysed to estimate the wavelength dependence of the refractive indices/extinction coefficients as well as the variation of optical band gap of these films. With the increase of Hf contents, a systematic increase of the band gap [from 3.65 eV (undoped film) to 4.15 eV (40 at.% Hf doped barium titanate film)] was observed. The reduction of the leakage current with increasing hafnium substitution is discussed on the basis of an increasing Schottky barrier height and due to a simultaneous increase in the band gap of the material. (C) 2007 Elsevier B.V. All rights reserved.