(Bi3.2La0.4Nd0.4)Ti3O12 (BLNT) thin films were prepared on Pt/Ti/SiO2/Si substrates by using chemical solution deposition technique, and the effects of annealing temperatures in the range of 550-750 degrees C on structure and electrical properties of the thin films were investigated. X-ray diffraction analysis shows that the thin films have a bismuth-layered perovskite structure with preferred (117) orientation. The surface morphology observation by field-emission scanning electron microscopy confirms that films are dense and smooth with uniformly distributed gains. The grain size of the thin films increases with increasing annealing temperature; meanwhile, the structural distortion of the thin films also increases. It was demonstrated that the thin films show good electrical properties. The dielectric constant and dielectric loss are 191 and 0.028, respectively, at 10 kHz for the thin film annealed at 600 degrees C, and the 2Pr value of the thin film annealed at 700 degrees C is 20.5 mu C/cm(2) at an electric field of 500 kV/cm. (C) 2007 Elsevier B.V All rights reserved.