In the present study, amorphous NiTiHf thin films with different compositions were deposited on silicon wafers by using D.C. magnetron sputtering. Crystallization and martensitic transformation characteristics were studied. Crystallization temperatures and activation energy increased with increasing Hf content. The addition of Hf caused larger atomic size mismatch and stronger interactions among constituent elements, thus, increasing the thermal stability of amorphous thin films. With increasing annealing temperature or Hf content, martensitic transformation temperature increased. The results imply that NiTiHf thin films may be used as the potential candidates for high temperature applications in microactuators. (C) 2007 Elsevier B.V. All rights reserved.