Hydrogenated polymorphous silicon (pm-Si:H) films were fabricated by conventional RF plasma enhanced chemical vapour deposition at high deposition rate (similar to 8 angstrom/s). The details of DOS distribution in the whole mobility gap and transport properties of both types of carriers were studied using a set of complementary techniques before and after light-soaking. The results show that these properties are similar to those of standard a-Si: H, or even can exceed them, at least for diffusion length in both states before and after light-soaking. (C) 2007 Elsevier B.V. All rights reserved.