A new method, experimental device and technology for large-grained CdTe film preparation are described. This method enabled to produce CdTe films with the thickness of 1-2 mu m and more. Films were recrystallized on the top of 100 gm thick Mo plate and Mo/glass substrate. Phase composition of the CdTe film remained stable up to 800 degrees C of heating plate temperature. Due to the temperature gradient on the recrystallization area, the CdTe film stuck on the upper, low-temperature (400 degrees C surface of the substrate, and an ohmic linear contact between the Mo and CdTe was achieved. Independently, face centered cubic form and large-grained CdTe film with preferable orientation (1 11) was formed. (c) 2007 Elsevier B.V. All rights reserved.