HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of similar to 1.20 cm(2)/V.s and an on/off current ratio of similar to 1 x 10(3). (c) 2008 Elsevier B.V. All rights reserved.